A review of narrow-channel effects for STI MOSFET's: A difference between surface- and buried-channel cases

A review of narrow-channel effects for STI MOSFET's: A difference between surface- and buried-channel cases

The shallow trench isolation (STI) is one of the key technologies for VLSI. The threshold voltage V th for surface-channel STI MOSFET's becomes lower with decreasing channel width W, which is called the inverse narrow-channel effect (INCE). Also, there is a hump in the subthreshold characterist...

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Veröffentlicht in:Solid-state electronics 1999-11, Vol.43 (11), p.2061-2066
Hauptverfasser: Shigyo, Naoyuki, Hiraoka, Takayuki
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Hiraoka, Takayuki
description The shallow trench isolation (STI) is one of the key technologies for VLSI. The threshold voltage V th for surface-channel STI MOSFET's becomes lower with decreasing channel width W, which is called the inverse narrow-channel effect (INCE). Also, there is a hump in the subthreshold characteristic. On the contrary, buried-channel STI MOSFET's reveal a conventional narrow-channel effect. Also, there is no hump in the subthreshold characteristic. This paper reviews above phenomena with a consistent explanation for the surface- and buried-channel STI MOSFET's. Countermeasures for INCE are also discussed.
doi_str_mv 10.1016/S0038-1101(99)00157-4
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title A review of narrow-channel effects for STI MOSFET's: A difference between surface- and buried-channel cases
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