Role of Indium on Nitrogen Incorporation in GaNAs Grown by Metalorganic Molecular-Beam Epitaxy

The role of indium on the growth surfaces of GaNAs was studied with metalorganic molecular-beam epitaxy. GaNAs was grown with and without triethylindium (TEIn) supply. High-resolution X-ray diffraction measurements reveal an increase in nitrogen incorporation in GaNAs with TEIn supply and negligible indium incorporation. This indicates that indium plays the role of a surfactant on the growth surface and enhances nitrogen incorporation in GaNAs.