Investigation of morphology and fractal behaviour on compound semiconductor surface after electrochemical layer removal

The electrochemical method is a very versatile tool for characterization and processing of compound semiconductors. In this paper we investigate the surface morphology and pattern formation of GaAs and InP surfaces after electrochemical layer removal. Different aqueous HCl based electrolites were used for the layer removal. The investigation of the surface pattern formation was carried out using the box counting method. The pictures of surface patterns were digitised and analysed using high resolution bitmap. The fractal dimension depends on the semiconductor materials, electrolyte and condition of etching, too.