Optimizing GaSb ( 1 ¯ 1 ¯ 1 ¯ ) and GaSb(001) surfaces for epitaxial film growth

Oxides were grown on acid etched ( 1 ¯ 1 ¯ 1 ¯ ) and GaSb(001) by UV-ozone oxidation. The in-situ thermal desorption of the oxide layers was used to set the true substrate temperature for epitaxial film growth. Oxide desorption was monitored by RHEED and the desorption process was used to set the substrate temperature prior to epitaxial film growth. GaSb wafers were acid etched prior to UV-ozone oxidation to remove native oxides. Auger electron spectroscopy and X-ray photoelectron spectroscopy were used to characterize the surface chemistry resulting from the treatments. Atomic force microscopy (AFM) was used to characterize the surface morphology of the treated wafers.