Integration of HSQ in the direct-on-metal approach for 0.25- mu m technology

Integration of HSQ in the direct-on-metal approach for 0.25- mu m technology

The spin-on low-k material coated directly on the metal lines, which is called the direct-on-metal (DOM) approach, has been investigated with respect to issues about the intraline capacitance, the intraline leakage current, metal corrosion, unlanded vias, and electromigration lifetime. The results i...

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Veröffentlicht in:Microelectronic engineering 1999-03, Vol.50 (1-4), p.349-355
Hauptverfasser: Gao, T, Witvrouw, A, Coenegrachts, B, Bruynseraede, C, Van Hove, M, Maex, K
Format: Artikel
Sprache:eng
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Zusammenfassung:The spin-on low-k material coated directly on the metal lines, which is called the direct-on-metal (DOM) approach, has been investigated with respect to issues about the intraline capacitance, the intraline leakage current, metal corrosion, unlanded vias, and electromigration lifetime. The results indicate that DOM can be successfully integrated with less process steps and better performance.
ISSN:0167-9317