Properties of films of multilayered ZnO: Al and ZnO deposited by an alternating sputtering method

Properties of films of multilayered ZnO: Al and ZnO deposited by an alternating sputtering method

A multilayered film of ZnO:Al and ZnO was prepared by alternating sputtering in Ar gas, and the influence on electrical properties of ZnO layers, inserted between ZnO:Al layers, was examined. Both the carrier concentration and the Hall mobility were increased. The data show that some carrier electro...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Thin solid films 1999, Vol.343, p.160-163
Hauptverfasser: Tominaga, K., Murayama, T., Umezu, N., Mori, I., Ushiro, T., Moriga, T., Nakabayashi, I.
Format: Artikel
Sprache:eng
Schlagworte:
Alternating sputtering
Multilayered film
ZnO:Al
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A multilayered film of ZnO:Al and ZnO was prepared by alternating sputtering in Ar gas, and the influence on electrical properties of ZnO layers, inserted between ZnO:Al layers, was examined. Both the carrier concentration and the Hall mobility were increased. The data show that some carrier electrons now move in the undoped ZnO layer and that the film crystallinity was improved in the multilayered film deposition.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(98)01653-8