Control of N Content of GaPN Grown by Molecular Beam Epitaxy and Growth of GaPN Lattice Matched to Si(100) Substrate

Authors investigate the N content of a GaPN epilayer grown on GaP(100) by rf MBE under various growth conditions. The N content of GaPN increases with decreasing growth temperature and with increasing rf power of the N plasma source. The N content was controlled by growth temperature and rf power, and the GaPN epilayer was grown on a Si(100) substrate with a thin GaP buffer layer. The epilayer is investigated by cross-sectional TEM and it is clear that misfit dislocations and threading dislocations are not generated in the GaPN epilayer. As a result, it is demonstrated that lattice-matched and defect-free GaPN epilayers can be grown on Si(100) with a thin GaP buffer layer. Authors also discuss the effect of N incorporation on the generation of dislocations. 14 refs.