C49–C54 phase transition in nanometric titanium disilicide nanograins
The first order C49–C54 phase transition was studied in single TiSi 2 grains embedded in a Si matrix by transmission electron microscopy and X-ray diffraction. The fraction of material transformed into C54 was determined at different times during the annealing in the 700–1100 °C temperature range. T...
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Veröffentlicht in: | Microelectronic engineering 2002-10, Vol.64 (1), p.189-196 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The first order C49–C54 phase transition was studied in single TiSi
2 grains embedded in a Si matrix by transmission electron microscopy and X-ray diffraction. The fraction of material transformed into C54 was determined at different times during the annealing in the 700–1100
°C temperature range. The fraction of C54 increases with temperature and the steady state value is reached in times of ∼60 s. The data are interpreted in terms of heterogeneous nucleation at the silicide–silicon interface. |
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ISSN: | 0167-9317 1873-5568 |
DOI: | 10.1016/S0167-9317(02)00786-4 |