C49–C54 phase transition in nanometric titanium disilicide nanograins

The first order C49–C54 phase transition was studied in single TiSi 2 grains embedded in a Si matrix by transmission electron microscopy and X-ray diffraction. The fraction of material transformed into C54 was determined at different times during the annealing in the 700–1100 °C temperature range. T...

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Veröffentlicht in:Microelectronic engineering 2002-10, Vol.64 (1), p.189-196
Hauptverfasser: Alessandrino, M.S, Grimaldi, M.G, La Via, F
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Sprache:eng
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Zusammenfassung:The first order C49–C54 phase transition was studied in single TiSi 2 grains embedded in a Si matrix by transmission electron microscopy and X-ray diffraction. The fraction of material transformed into C54 was determined at different times during the annealing in the 700–1100 °C temperature range. The fraction of C54 increases with temperature and the steady state value is reached in times of ∼60 s. The data are interpreted in terms of heterogeneous nucleation at the silicide–silicon interface.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(02)00786-4