Multidimensional Perovskites for High Detectivity Photodiodes

Low‐dimensional perovskites attract increasing interest due to tunable optoelectronic properties and high stability. Here, it is shown that perovskite thin films with a vertical gradient in dimensionality result in graded electronic bandgap structures that are ideal for photodiode applications. Positioning low‐dimensional, vertically‐oriented perovskite phases at the interface with the electron blocking layer increases the activation energy for thermal charge generation and thereby effectively lowers the dark current density to a record‐low value of 5 × 10−9 mA cm−2 without compromising responsivity, resulting in a noise‐current‐based specific detectivity exceeding 7 × 1012 Jones at 600 nm. These multidimensional perovskite photodiodes show promising air stability and a dynamic range over ten orders of magnitude, and thus represent a new generation of high‐performance low‐cost photodiodes. Perovskite thin films with a 2D–3D gradient result in graded electronic bandgap structures that are ideal for photodiode applications. Low‐dimensional perovskite phases at the interface with the electron blocking layer increase the activation energy for thermal charge generation and thereby effectively lower the dark current density to a record‐value of 10–9 mA cm–2, resulting in maximized sensitivity.