Influence of non-perovskite phases on ferroelectric and dielectric behavior of electron-beam deposited PZT thin films

Crystalline structure-induced effects on the ferroelectric and dielectric properties in electron-beam deposited PZT thin films are described, TiO 2 dispersion in PZT reduces dielectric constant and charge storage density to 400 and 5.4 μC/cm 2 and increases dissipation factor. Pyrochlore PZT inclusions cause further reduction to 60 and 77 nC/cm 2 but have no effect on microscopic polarization. Wide variation in relaxation times below 220°C and Debye-like relaxation process above 220°C is the characteristics behavior of TiO 2 mixed PZT films. A relaxation time constant of ≈ 10 −11s with activation energy of 0.38 eV is observed in TiO 2 mixed PZT. Inclusion of pyrochlore phase causes high time constant of relaxation process ≈4.2 μs and large dissipation factor.