Perspective on Nanofluidic Memristors: From Mechanism to Application

Nanofluidic memristors are memory resistors based on nanoconfined fluidic systems exhibiting history‐dependent ion conductivity. Toward establishing powerful computing systems beyond the Harvard architecture, these ion‐based neuromorphic devices attracted enormous research attention owing to the uni...

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Veröffentlicht in:Chemistry, an Asian journal an Asian journal, 2022-11, Vol.17 (21), p.e202200682-n/a
Hauptverfasser: Xie, Boyang, Xiong, Tianyi, Li, Weiqi, Gao, Tienan, Zong, Jianwei, Liu, Ying, Yu, Ping
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Sprache:eng
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Zusammenfassung:Nanofluidic memristors are memory resistors based on nanoconfined fluidic systems exhibiting history‐dependent ion conductivity. Toward establishing powerful computing systems beyond the Harvard architecture, these ion‐based neuromorphic devices attracted enormous research attention owing to the unique characteristics of ion‐based conductors. However, the design of nanofluidic memristor is still at a primary state and a systematic guidance on the rational design of nanofluidic system is desperately required for the development of nanofluidic‐based neuromorphic devices. Herein, we proposed a systematic review on the history, main mechanism and potential application of nanofluidic memristors in order to give a prospective view on the design principle of memristors based on nanofluidic systems. Furthermore, based on the present status of these devices, some fundamental challenges for this promising area were further discussed to show the possible application of these ion‐based devices. Nanofluidic memristors have attracted increasing attention owing to the peculiar transport characteristics of nanofluidic systems, structural similarity to biological neurons and the unique carrier characteristics of ions. This review summarizes the developing history, mechanisms and neuromorphic performances of nanofluidic memristors. A short outlook on the possible advantages, challenges as well as potential applications for nanofluidic memristors is discussed.
ISSN:1861-4728
1861-471X
DOI:10.1002/asia.202200682