Interfacial Reaction between Titanium Thin Films and Aluminum Nitride Substrates

Interfacial Reaction between Titanium Thin Films and Aluminum Nitride Substrates

Interdiffusion and reaction at the interface between titanium thin films and AlN have been studied by using Rutherford backscattering spectrometry and transmission electron microscopy. Ti2AlN is formed as a result of reaction with titanium and AlN at temperatures of 800°‐950°C. The activation energy...

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Veröffentlicht in:Journal of the American Ceramic Society 1999-06, Vol.82 (6), p.1547-1552
Hauptverfasser: Imanaka, Yoshihiko, Notis, Michael R.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Building materials. Ceramics. Glasses
Ceramic industries
Chemical industry and chemicals
Electrotechnical and electronic ceramics
Exact sciences and technology
Technical ceramics
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Beschreibung
Zusammenfassung:Interdiffusion and reaction at the interface between titanium thin films and AlN have been studied by using Rutherford backscattering spectrometry and transmission electron microscopy. Ti2AlN is formed as a result of reaction with titanium and AlN at temperatures of 800°‐950°C. The activation energy for Ti2AlN formation in the temperature range of 800°‐850°C is 224 kJ/mol, which is similar to that of nitrogen diffusion in titanium. Therefore, the formation of Ti2AlN is believed to be controlled by the diffusion of nitrogen in titanium.
ISSN:0002-7820
1551-2916
DOI:10.1111/j.1151-2916.1999.tb01953.x