Time-dependent-dielectric-breakdown of hydrogen implanted polyoxides

The time-to-breakdown (tbd) of polysilicon/polyoxide/polysilicon structures, hydrogenated by hydrogen ion implantation, is investigated. The ln(tbd) versus 1/Eox projection lines are corrected by using an average oxide field enhancement factor for the interface polysilicon/thermally grown polyoxide. A field acceleration factor G≈270MV/cm in the time-to-breakdown projection line is obtained. The obtained lower values of the field acceleration factor G, in comparison to as-grown polyoxides, are explained in the terms of the oxide traps generated during the hydrogen ion implantation.