Negative persistent photoconductivity in an InAs/GaSb quantum well

We performed magneto-resistance measurements on a semi-metallic InAs–GaSb quantum well. By shining visible light on the sample, a Negative Persistent Photoconductivity effect (NPPC) was observed. Overnight illumination reduced the electron density of the sample from 9.54×10 11 cm −2 to 9.04×10 11 cm...

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Veröffentlicht in:	Solid state communications 1999-01, Vol.110 (3), p.169-171
Hauptverfasser:	Schets, H, Janssen, P, Witters, J, Borghs, S
Format:	Artikel
Sprache:	eng
Schlagworte:	A. Quantum wells A. Semiconductors Condensed matter: electronic structure, electrical, magnetic, and optical properties D. Photoconductivity Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions Photoconduction and photovoltaic effects Photoconduction and photovoltaic effects photodielectric effects Physics
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Beschreibung
Zusammenfassung:	We performed magneto-resistance measurements on a semi-metallic InAs–GaSb quantum well. By shining visible light on the sample, a Negative Persistent Photoconductivity effect (NPPC) was observed. Overnight illumination reduced the electron density of the sample from 9.54×10 11 cm −2 to 9.04×10 11 cm −2. A possible explanation for this effect is being sought in interface defect states.
ISSN:	0038-1098 1879-2766
DOI:	10.1016/S0038-1098(98)00625-5