In-depth compositional uniformity of CuInSe sub 2 prepared by two-stage growth sequences

In-depth compositional uniformity of CuInSe sub 2 prepared by two-stage growth sequences

A high degree of in-depth compositional uniformity is an important prerequisite for obtaining device-quality CuInSe sub 2 absorber films. In this study, absorber films were prepared by a typical two-stage process in which selenium-free (In/Cu/In) and selenium-containing (InSe/Cu/InSe) precursors wer...

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Veröffentlicht in:Journal of physics. D, Applied physics Applied physics, 1999-12, Vol.32 (24), p.3093-3098
Hauptverfasser: Alberts, V, Chenene, M L
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container_title Journal of physics. D, Applied physics
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creator Alberts, V
Chenene, M L
description A high degree of in-depth compositional uniformity is an important prerequisite for obtaining device-quality CuInSe sub 2 absorber films. In this study, absorber films were prepared by a typical two-stage process in which selenium-free (In/Cu/In) and selenium-containing (InSe/Cu/InSe) precursors were reacted with H sub 2 Se/Ar.
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fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_27023806</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>27023806</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_270238063</originalsourceid><addsrcrecordid>eNqNzL0OgjAUQOEOmog_73AnN5JaIrATjc46uJGCF62B3trbhvD2OvgATmf5cmYikVKpNCtUsRBL5peUcp-Xu0Tczja9owtPaGlwxCYYsrqHaE1HfjBhAuqgimd7QeDYgALn0WmPd2gmCCOlHPQD4eFp_F4Y3xFti7wW8073jJtfV2J7PFyrU-o8fQmHejDcYt9rixS5VoVUWSnz7G_4AemzRKI</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27023806</pqid></control><display><type>article</type><title>In-depth compositional uniformity of CuInSe sub 2 prepared by two-stage growth sequences</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Alberts, V ; Chenene, M L</creator><creatorcontrib>Alberts, V ; Chenene, M L</creatorcontrib><description>A high degree of in-depth compositional uniformity is an important prerequisite for obtaining device-quality CuInSe sub 2 absorber films. In this study, absorber films were prepared by a typical two-stage process in which selenium-free (In/Cu/In) and selenium-containing (InSe/Cu/InSe) precursors were reacted with H sub 2 Se/Ar.</description><identifier>ISSN: 0022-3727</identifier><language>eng</language><ispartof>Journal of physics. D, Applied physics, 1999-12, Vol.32 (24), p.3093-3098</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781</link.rule.ids></links><search><creatorcontrib>Alberts, V</creatorcontrib><creatorcontrib>Chenene, M L</creatorcontrib><title>In-depth compositional uniformity of CuInSe sub 2 prepared by two-stage growth sequences</title><title>Journal of physics. D, Applied physics</title><description>A high degree of in-depth compositional uniformity is an important prerequisite for obtaining device-quality CuInSe sub 2 absorber films. In this study, absorber films were prepared by a typical two-stage process in which selenium-free (In/Cu/In) and selenium-containing (InSe/Cu/InSe) precursors were reacted with H sub 2 Se/Ar.</description><issn>0022-3727</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNqNzL0OgjAUQOEOmog_73AnN5JaIrATjc46uJGCF62B3trbhvD2OvgATmf5cmYikVKpNCtUsRBL5peUcp-Xu0Tczja9owtPaGlwxCYYsrqHaE1HfjBhAuqgimd7QeDYgALn0WmPd2gmCCOlHPQD4eFp_F4Y3xFti7wW8073jJtfV2J7PFyrU-o8fQmHejDcYt9rixS5VoVUWSnz7G_4AemzRKI</recordid><startdate>19991221</startdate><enddate>19991221</enddate><creator>Alberts, V</creator><creator>Chenene, M L</creator><scope>8FD</scope><scope>H8G</scope><scope>JG9</scope></search><sort><creationdate>19991221</creationdate><title>In-depth compositional uniformity of CuInSe sub 2 prepared by two-stage growth sequences</title><author>Alberts, V ; Chenene, M L</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_270238063</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Alberts, V</creatorcontrib><creatorcontrib>Chenene, M L</creatorcontrib><collection>Technology Research Database</collection><collection>Copper Technical Reference Library</collection><collection>Materials Research Database</collection><jtitle>Journal of physics. D, Applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Alberts, V</au><au>Chenene, M L</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>In-depth compositional uniformity of CuInSe sub 2 prepared by two-stage growth sequences</atitle><jtitle>Journal of physics. D, Applied physics</jtitle><date>1999-12-21</date><risdate>1999</risdate><volume>32</volume><issue>24</issue><spage>3093</spage><epage>3098</epage><pages>3093-3098</pages><issn>0022-3727</issn><abstract>A high degree of in-depth compositional uniformity is an important prerequisite for obtaining device-quality CuInSe sub 2 absorber films. In this study, absorber films were prepared by a typical two-stage process in which selenium-free (In/Cu/In) and selenium-containing (InSe/Cu/InSe) precursors were reacted with H sub 2 Se/Ar.</abstract></addata></record>
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title In-depth compositional uniformity of CuInSe sub 2 prepared by two-stage growth sequences
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T03%3A34%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=In-depth%20compositional%20uniformity%20of%20CuInSe%20sub%202%20prepared%20by%20two-stage%20growth%20sequences&rft.jtitle=Journal%20of%20physics.%20D,%20Applied%20physics&rft.au=Alberts,%20V&rft.date=1999-12-21&rft.volume=32&rft.issue=24&rft.spage=3093&rft.epage=3098&rft.pages=3093-3098&rft.issn=0022-3727&rft_id=info:doi/&rft_dat=%3Cproquest%3E27023806%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=27023806&rft_id=info:pmid/&rfr_iscdi=true