In-depth compositional uniformity of CuInSe sub 2 prepared by two-stage growth sequences

In-depth compositional uniformity of CuInSe sub 2 prepared by two-stage growth sequences

A high degree of in-depth compositional uniformity is an important prerequisite for obtaining device-quality CuInSe sub 2 absorber films. In this study, absorber films were prepared by a typical two-stage process in which selenium-free (In/Cu/In) and selenium-containing (InSe/Cu/InSe) precursors wer...

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Veröffentlicht in:Journal of physics. D, Applied physics Applied physics, 1999-12, Vol.32 (24), p.3093-3098
Hauptverfasser: Alberts, V, Chenene, M L
Format: Artikel
Sprache:eng
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Zusammenfassung:A high degree of in-depth compositional uniformity is an important prerequisite for obtaining device-quality CuInSe sub 2 absorber films. In this study, absorber films were prepared by a typical two-stage process in which selenium-free (In/Cu/In) and selenium-containing (InSe/Cu/InSe) precursors were reacted with H sub 2 Se/Ar.
ISSN:0022-3727