Measuring the generation lifetime profile modified by MeV H + ion implantation in silicon

A silicon wedge mask with thickness varying from approximately 5 μm to a few hundred μm has been used for converting the depth distribution of defect concentration induced by 4 MeV H + ion implantation in silicon to a lateral scale on the surface, i.e. the distance from the edge of the wedge mask. Thus, using proper devices fabricated on bulk Si prior to ion implantation, depth profiles of the generation lifetime of minority charge carriers and of the different defect densities can be measured by the transient capacitance method and by Deep Level Transient Spectroscopy (DLTS), respectively. The distribution of lifetime follows well that of the implantation induced vacancies calculated by the TRIM code in the applied dose range (from 1 × 10 10 to 3 × 10 11 H +/cm 2). The correlation between implantation dose and lifetime decrease is also discussed.