Ultrafast Symmetry-Breaking Charge Separation in a Perylene Bisimide Dimer Enabled by Vibronic Coupling and Breakdown of Adiabaticity

Perylene bisimides (PBIs) have received great attention in their applicability to optoelectronics. Especially, symmetry-breaking charge separation (SB-CS) in PBIs has been investigated to mimic the efficient light capturing and charge generation in natural light-harvesting systems. However, unlike u...

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Veröffentlicht in:Journal of the American Chemical Society 2022-08, Vol.144 (34), p.15539-15548
Hauptverfasser: Hong, Yongseok, Schlosser, Felix, Kim, Woojae, Würthner, Frank, Kim, Dongho
Format: Artikel
Sprache:eng
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Zusammenfassung:Perylene bisimides (PBIs) have received great attention in their applicability to optoelectronics. Especially, symmetry-breaking charge separation (SB-CS) in PBIs has been investigated to mimic the efficient light capturing and charge generation in natural light-harvesting systems. However, unlike ultrafast CS dynamics in donor–acceptor heterojunction materials, ultrafast SB-CS in a stacked homodimer has still been challenging due to excimer formation in the absence of rigidifying surroundings such as a special pair in the natural systems. Herein, we present the detailed mechanism of ultrafast photoinduced SB-CS occurring in a 1,7-bis­(N-pyrrolidinyl) PBI dimer within a cyclophane. Through narrow-band and broad-band transient absorption spectroscopy, we demonstrate that ultrafast SB-CS in the dimer is enabled by the combination of (1) vibrationally coherent charge-transfer resonance-enhanced excimer formation and (2) breakdown of adiabaticity (formation of SB-CS diabats) in the excimer state via structural and solvent fluctuation. Quantum chemical calculations also underpin that the participation of strong electron-donating substituents in overall vibrational modes plays a crucial role in triggering the ultrafast SB-CS. Therefore, our work provides an alternative route to facilitate ultrafast SB-CS in PBIs and thereby establishes a novel strategy for the design of optoelectronic materials.
ISSN:0002-7863
1520-5126
DOI:10.1021/jacs.2c03916