Model for the Mn acceptor in GaAs
We present a model based on the Baldereschi–Lipari effective mass theory and the sp–d exchange interaction between the valence band and the Mn d electrons (3 d 5). It fits in with the available experimental data and yields a relationship between the exchange-induced splitting of the 1S 3/2 impurity...
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| Veröffentlicht in: | Solid state communications 1999-01, Vol.113 (1), p.17-21 |
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| container_title | Solid state communications |
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| creator | Bhattacharjee, A.K. Benoit à la Guillaume, C. |
| description | We present a model based on the Baldereschi–Lipari effective mass theory and the sp–d exchange interaction between the valence band and the Mn d electrons (3
d
5). It fits in with the available experimental data and yields a relationship between the exchange-induced splitting of the 1S
3/2 impurity ground state and the valence band exchange constant
N
0
β. By using the recently reported value of the splitting, deduced from infrared spectroscopy, and fitting the known ground state binding energy, we obtain
N
0β≃−0.9
eV.
We also study the two-hole bound state in the Hartree self-consistent approximation and account for the absence of Mn-associated bound exciton and discuss the sign anomalies in the magneto-optical data in dilute Ga
1−
x
Mn
x
As. |
| doi_str_mv | 10.1016/S0038-1098(99)00438-X |
| format | Article |
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d
5). It fits in with the available experimental data and yields a relationship between the exchange-induced splitting of the 1S
3/2 impurity ground state and the valence band exchange constant
N
0
β. By using the recently reported value of the splitting, deduced from infrared spectroscopy, and fitting the known ground state binding energy, we obtain
N
0β≃−0.9
eV.
We also study the two-hole bound state in the Hartree self-consistent approximation and account for the absence of Mn-associated bound exciton and discuss the sign anomalies in the magneto-optical data in dilute Ga
1−
x
Mn
x
As.</description><identifier>ISSN: 0038-1098</identifier><identifier>EISSN: 1879-2766</identifier><identifier>DOI: 10.1016/S0038-1098(99)00438-X</identifier><identifier>CODEN: SSCOA4</identifier><language>eng</language><publisher>Oxford: Elsevier Ltd</publisher><subject>C. Impurities in semiconductors ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; D. Electronic states (localized) ; D. Exchange and superexchange ; Electron states ; Exact sciences and technology ; Iii-v semiconductors ; Impurity and defect levels ; Physics</subject><ispartof>Solid state communications, 1999-01, Vol.113 (1), p.17-21</ispartof><rights>1999 Elsevier Science Ltd</rights><rights>1999 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c367t-67cfec7bd30dac86bd9bd7f3cfbec5054877ac10ab5a17bf124748a43e68851c3</citedby><cites>FETCH-LOGICAL-c367t-67cfec7bd30dac86bd9bd7f3cfbec5054877ac10ab5a17bf124748a43e68851c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0038-1098(99)00438-X$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3548,27923,27924,45994</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=1994869$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Bhattacharjee, A.K.</creatorcontrib><creatorcontrib>Benoit à la Guillaume, C.</creatorcontrib><title>Model for the Mn acceptor in GaAs</title><title>Solid state communications</title><description>We present a model based on the Baldereschi–Lipari effective mass theory and the sp–d exchange interaction between the valence band and the Mn d electrons (3
d
5). It fits in with the available experimental data and yields a relationship between the exchange-induced splitting of the 1S
3/2 impurity ground state and the valence band exchange constant
N
0
β. By using the recently reported value of the splitting, deduced from infrared spectroscopy, and fitting the known ground state binding energy, we obtain
N
0β≃−0.9
eV.
We also study the two-hole bound state in the Hartree self-consistent approximation and account for the absence of Mn-associated bound exciton and discuss the sign anomalies in the magneto-optical data in dilute Ga
1−
x
Mn
x
As.</description><subject>C. Impurities in semiconductors</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>D. Electronic states (localized)</subject><subject>D. Exchange and superexchange</subject><subject>Electron states</subject><subject>Exact sciences and technology</subject><subject>Iii-v semiconductors</subject><subject>Impurity and defect levels</subject><subject>Physics</subject><issn>0038-1098</issn><issn>1879-2766</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNqFkEtLAzEUhYMoWKs_QRhBRBejSSeTx0pK0Sq0uFChu5C5ucHIOFOTqeC_d_pAl64uB75zD-cQcsroNaNM3DxTWqicUa0utb6ilPdqsUcGTEmdj6QQ-2TwixySo5TeKaVSSTYgZ_PWYZ35NmbdG2bzJrMAuOx6HZpsasfpmBx4Wyc82d0heb2_e5k85LOn6eNkPMuhELLLhQSPICtXUGdBicrpyklfgK8QSlpyJaUFRm1VWiYrz0ZccmV5gUKpkkExJBfbv8vYfq4wdeYjJMC6tg22q2RGQmvBS9GD5RaE2KYU0ZtlDB82fhtGzXoQsxnErNsarc1mELPofee7AJvA1j7aBkL6M2vNldA9drvFsC_7FTCaBAEbQBciQmdcG_4J-gGeq3NR</recordid><startdate>19990101</startdate><enddate>19990101</enddate><creator>Bhattacharjee, A.K.</creator><creator>Benoit à la Guillaume, C.</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19990101</creationdate><title>Model for the Mn acceptor in GaAs</title><author>Bhattacharjee, A.K. ; Benoit à la Guillaume, C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c367t-67cfec7bd30dac86bd9bd7f3cfbec5054877ac10ab5a17bf124748a43e68851c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><topic>C. Impurities in semiconductors</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>D. Electronic states (localized)</topic><topic>D. Exchange and superexchange</topic><topic>Electron states</topic><topic>Exact sciences and technology</topic><topic>Iii-v semiconductors</topic><topic>Impurity and defect levels</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bhattacharjee, A.K.</creatorcontrib><creatorcontrib>Benoit à la Guillaume, C.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solid state communications</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bhattacharjee, A.K.</au><au>Benoit à la Guillaume, C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Model for the Mn acceptor in GaAs</atitle><jtitle>Solid state communications</jtitle><date>1999-01-01</date><risdate>1999</risdate><volume>113</volume><issue>1</issue><spage>17</spage><epage>21</epage><pages>17-21</pages><issn>0038-1098</issn><eissn>1879-2766</eissn><coden>SSCOA4</coden><abstract>We present a model based on the Baldereschi–Lipari effective mass theory and the sp–d exchange interaction between the valence band and the Mn d electrons (3
d
5). It fits in with the available experimental data and yields a relationship between the exchange-induced splitting of the 1S
3/2 impurity ground state and the valence band exchange constant
N
0
β. By using the recently reported value of the splitting, deduced from infrared spectroscopy, and fitting the known ground state binding energy, we obtain
N
0β≃−0.9
eV.
We also study the two-hole bound state in the Hartree self-consistent approximation and account for the absence of Mn-associated bound exciton and discuss the sign anomalies in the magneto-optical data in dilute Ga
1−
x
Mn
x
As.</abstract><cop>Oxford</cop><pub>Elsevier Ltd</pub><doi>10.1016/S0038-1098(99)00438-X</doi><tpages>5</tpages></addata></record> |
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| ispartof | Solid state communications, 1999-01, Vol.113 (1), p.17-21 |
| issn | 0038-1098 1879-2766 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_26996456 |
| source | ScienceDirect Journals (5 years ago - present) |
| subjects | C. Impurities in semiconductors Condensed matter: electronic structure, electrical, magnetic, and optical properties D. Electronic states (localized) D. Exchange and superexchange Electron states Exact sciences and technology Iii-v semiconductors Impurity and defect levels Physics |
| title | Model for the Mn acceptor in GaAs |
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