Model for the Mn acceptor in GaAs

We present a model based on the Baldereschi–Lipari effective mass theory and the sp–d exchange interaction between the valence band and the Mn d electrons (3 d 5). It fits in with the available experimental data and yields a relationship between the exchange-induced splitting of the 1S 3/2 impurity...

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Veröffentlicht in:Solid state communications 1999-01, Vol.113 (1), p.17-21
Hauptverfasser: Bhattacharjee, A.K., Benoit à la Guillaume, C.
Format: Artikel
Sprache:eng
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Zusammenfassung:We present a model based on the Baldereschi–Lipari effective mass theory and the sp–d exchange interaction between the valence band and the Mn d electrons (3 d 5). It fits in with the available experimental data and yields a relationship between the exchange-induced splitting of the 1S 3/2 impurity ground state and the valence band exchange constant N 0 β. By using the recently reported value of the splitting, deduced from infrared spectroscopy, and fitting the known ground state binding energy, we obtain N 0β≃−0.9 eV. We also study the two-hole bound state in the Hartree self-consistent approximation and account for the absence of Mn-associated bound exciton and discuss the sign anomalies in the magneto-optical data in dilute Ga 1− x Mn x As.
ISSN:0038-1098
1879-2766
DOI:10.1016/S0038-1098(99)00438-X