Model for the Mn acceptor in GaAs
We present a model based on the Baldereschi–Lipari effective mass theory and the sp–d exchange interaction between the valence band and the Mn d electrons (3 d 5). It fits in with the available experimental data and yields a relationship between the exchange-induced splitting of the 1S 3/2 impurity...
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Veröffentlicht in: | Solid state communications 1999-01, Vol.113 (1), p.17-21 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We present a model based on the Baldereschi–Lipari effective mass theory and the sp–d exchange interaction between the valence band and the Mn d electrons (3
d
5). It fits in with the available experimental data and yields a relationship between the exchange-induced splitting of the 1S
3/2 impurity ground state and the valence band exchange constant
N
0
β. By using the recently reported value of the splitting, deduced from infrared spectroscopy, and fitting the known ground state binding energy, we obtain
N
0β≃−0.9
eV.
We also study the two-hole bound state in the Hartree self-consistent approximation and account for the absence of Mn-associated bound exciton and discuss the sign anomalies in the magneto-optical data in dilute Ga
1−
x
Mn
x
As. |
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ISSN: | 0038-1098 1879-2766 |
DOI: | 10.1016/S0038-1098(99)00438-X |