Lineshape analysis of photoreflectance spectra from InGaAs/GaAs quantum wells

The fundamental optical transitions in In0.15Ga0.85As/GaAs single symmetric quantum wells (QWs) are studied through photoreflectance (PR) measurements and their dependence on the well distance from the surface. A phase rotation of the lineshape of the PR signal is observed as was predicted in our pr...

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Veröffentlicht in:	Superlattices and microstructures 1999-10, Vol.26 (4), p.243-250
Hauptverfasser:	Choque, N.M.S., Beliaev, D., Soares, J.A.N.T., Scolfaro, L.M.R., Sperandio, A.L., Quivy, A.A., Leite, J.R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Iii-v semiconductors Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics
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Beschreibung
Zusammenfassung:	The fundamental optical transitions in In0.15Ga0.85As/GaAs single symmetric quantum wells (QWs) are studied through photoreflectance (PR) measurements and their dependence on the well distance from the surface. A phase rotation of the lineshape of the PR signal is observed as was predicted in our previous works. PR spectra of several samples, measured at 77 K, are compared with results of PR lineshape calculations, and a fairly good agreement is found. The quantum-confined Stark effect is shown to be the dominant modulation mechanism in the QW. Pronounced interference effects make PR spectra from QWs sensitive to the cap layer thickness.
ISSN:	0749-6036 1096-3677
DOI:	10.1006/spmi.1999.0770