Thermal-Treatment Induced Deep Electron Traps in AlInP

Thermal-Treatment Induced Deep Electron Traps in AlInP

The effects of thermal treatment on the quality of AlInP film, grown by metal-organic chemical vapor deposition (MOCVD), have been carefully investigated using deep level transient spectroscopy (DLTS). Two thermal-treatment-induced deep levels were observed in the samples thermal-treated above 500°C...

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Veröffentlicht in:Japanese Journal of Applied Physics 2001, Vol.40 (8R), p.4864-4865
Hauptverfasser: Sung, Wei-Jer, Huang, Kai-Feng, Lin, Wen-Jen, Tseng, Tseung-Yuen
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container_title Japanese Journal of Applied Physics
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creator Sung, Wei-Jer
Huang, Kai-Feng
Lin, Wen-Jen
Tseng, Tseung-Yuen
description The effects of thermal treatment on the quality of AlInP film, grown by metal-organic chemical vapor deposition (MOCVD), have been carefully investigated using deep level transient spectroscopy (DLTS). Two thermal-treatment-induced deep levels were observed in the samples thermal-treated above 500°C and shall be attributed to the generation of phosphorus vacancies (V p ) by evaporation of phosphorus from AlInP surface. Examination of these deep levels provided a relatively simple means of understanding the thermal-treatment-induced behavior, thus allowing us to determine an appropriate process for manufacturing AlInP-based products.
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title Thermal-Treatment Induced Deep Electron Traps in AlInP
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