Thermal-Treatment Induced Deep Electron Traps in AlInP
The effects of thermal treatment on the quality of AlInP film, grown by metal-organic chemical vapor deposition (MOCVD), have been carefully investigated using deep level transient spectroscopy (DLTS). Two thermal-treatment-induced deep levels were observed in the samples thermal-treated above 500°C...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2001, Vol.40 (8R), p.4864-4865 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The effects of thermal treatment on the quality of AlInP film, grown by metal-organic chemical vapor deposition (MOCVD), have been carefully investigated using deep level transient spectroscopy (DLTS). Two thermal-treatment-induced deep levels were observed in the samples thermal-treated above 500°C and shall be attributed to the generation of phosphorus vacancies (V
p
) by evaporation of phosphorus from AlInP surface. Examination of these deep levels provided a relatively simple means of understanding the thermal-treatment-induced behavior, thus allowing us to determine an appropriate process for manufacturing AlInP-based products. |
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| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.40.4864 |