Highly efficient blue InGaN nanoscale light-emitting diodes

Indium gallium nitride (InGaN)-based micro-LEDs (μLEDs) are suitable for meeting ever-increasing demands for high-performance displays owing to their high efficiency, brightness and stability 1 – 5 . However, μLEDs have a large problem in that the external quantum efficiency (EQE) decreases with the size reduction 6 – 9 . Here we demonstrate a blue InGaN/GaN multiple quantum well (MQW) nanorod-LED (nLED) with high EQE. To overcome the size-dependent EQE reduction problem 8 , 9 , we studied the interaction between the GaN surface and the sidewall passivation layer through various analyses. Minimizing the point defects created during the passivation process is crucial to manufacturing high-performance nLEDs. Notably, the sol–gel method is advantageous for the passivation because SiO 2 nanoparticles are adsorbed on the GaN surface, thereby minimizing its atomic interactions. The fabricated nLEDs showed an EQE of 20.2 ± 0.6%, the highest EQE value ever reported for the LED in the nanoscale. This work opens the way for manufacturing self-emissive nLED displays that can become an enabling technology for next-generation displays. Using a sol–gel passivation method, the fabrication of blue InGaN nanorod-LEDs with the highest external quantum efficiency value ever reported for LEDs in the nanoscale is demonstrated.