High-performance double-recessed InAlAs/InGaAs power metamorphic HEMT on GaAs substrate

High-performance double-recessed InAlAs/InGaAs power metamorphic HEMT on GaAs substrate

Double-recess power metamorphic high electron mobility transistors (MHEMTs) on GaAs substrates were successfully demonstrated. The In/sub 0.53/Al/sub 0.47/As/In/sub 0.65/Al/sub 0.35/As structures exhibited extrinsic transconductance of 1050 mS/mm and breakdown of 8.3 V, which are comparable to that...

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Veröffentlicht in:IEEE microwave and guided wave letters 1999-11, Vol.9 (11), p.458-460
Hauptverfasser: Tu, D.-W., Wang, S., Liu, J.S.M., Hwang, K.C., Kong, W., Chao, P.C., Nichols, K.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Circuit properties
Electric breakdown
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Gallium arsenide
HEMTs
Indium compounds
Indium gallium arsenide
Indium phosphide
mHEMTs
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
MODFETs
Power generation
Transconductance
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Zusammenfassung:Double-recess power metamorphic high electron mobility transistors (MHEMTs) on GaAs substrates were successfully demonstrated. The In/sub 0.53/Al/sub 0.47/As/In/sub 0.65/Al/sub 0.35/As structures exhibited extrinsic transconductance of 1050 mS/mm and breakdown of 8.3 V, which are comparable to that of the InP power HEMT. Excellent maximum power added efficiency (PAE) of 60.2% with output power of 0.45 W/mm and record associated power gain of 17.1 dB were realized at 20 GHz. A maximum output power of 0.51 W/mm has also been demonstrated with the device. This is the first demonstration of high-efficiency K-band power MHEMT's.
ISSN:1051-8207
1558-2329
DOI:10.1109/75.808035