GaN-Based Laser Diodes Processed by Annealing with Minority-Carrier Injection

Minority-carrier injection was used to activate the acceptor dopant of GaN-based laser diodes. Lasing was observed in samples treated at temperatures above 350°C. The threshold current and current density were 690 mA and 13.8 kA/cm 2 , respectively. The lasing characteristic was slightly better than that of devices fabricated by conventional thermal annealing. The devices were repassivated by additional annealing in an open-circuit configuration, and then reactivated by the present method. Laser oscillation was obtained on the “reactivated” samples with no significant change in threshold current.