The effect of energetic ion bombardment during growth on the interface structure of Co/Cu multilayers

A modified unbalanced magnetron sputtering technique was applied to the growth of multilayer Co/Cu films in order to systematically study the interface structure evolved under ion bombardment. X-ray reflectivity measurements revealed an interface smoothing effect in samples deposited under ∼200 eV i...

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Veröffentlicht in:	Journal of magnetism and magnetic materials 1999-06, Vol.198, p.713-715
Hauptverfasser:	Telling, N.D, Karlsson, C, Crapper, M.D, Tang, C.C
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Deposition by sputtering Exact sciences and technology Interface structure and roughness Interfaces Ion-assisted deposition Materials science Metals. Metallurgy Methods of deposition of films and coatings film growth and epitaxy Multilayers Physics Solid surfaces and solid-solid interfaces Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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Beschreibung
Zusammenfassung:	A modified unbalanced magnetron sputtering technique was applied to the growth of multilayer Co/Cu films in order to systematically study the interface structure evolved under ion bombardment. X-ray reflectivity measurements revealed an interface smoothing effect in samples deposited under ∼200 eV ion bombardment. A reduction in the Bragg peak intensity for samples with a greater number of bilayer repeats was also observed. This was attributed to roughening of the final surface in the thicker films.
ISSN:	0304-8853
DOI:	10.1016/S0304-8853(98)01015-4