Schottky rectifiers fabricated on free-standing GaN substrates

Schottky rectifiers fabricated on free-standing GaN substrates

GaN Schottky rectifiers have been fabricated on free-standing substrates and on epi/substrate structures. Forward turn-on voltages were as low as 3 V at 25°C. Reverse recovery was complete in

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Veröffentlicht in:Solid-state electronics 2001-03, Vol.45 (3), p.405-410
Hauptverfasser: Johnson, J.W., LaRoch, J.R., Ren, F., Gila, B.P., Overberg, M.E., Abernathy, C.R., Chyi, J.-I., Chuo, C.C., Nee, T.E., Lee, C.M., Lee, K.P., Park, S.S., Park, Y.J., Pearton, S.J.
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Sprache:eng
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Zusammenfassung:GaN Schottky rectifiers have been fabricated on free-standing substrates and on epi/substrate structures. Forward turn-on voltages were as low as 3 V at 25°C. Reverse recovery was complete in
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(01)00059-4