Relaxed silicon-germanium on insulator substrate by layer transfer
The fabrication of 4 in. relaxed Si sub(1-x)Ge sub(x)-on-insulator (SGOI) substrates by layer transfer was demonstrated. A high-quality relaxed Si sub(1-x )Ge sub(x) layer was grown using ultrahigh vacuum chemical vapor deposition (UHVCVD) on 4 in. Si donor wafers. Thin Si sub(1-x)Ge sub(x) film (x...
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| Veröffentlicht in: | Journal of electronic materials 2001-12, Vol.30 (12), p.L37-L39 |
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| creator | ZHIYUAN CHENG TARASCHI, Gianni CURRIE, Matthew T LEITZ, Chris W LEE, Minjoo L PITERA, Arthur LANGDO, Thomas A HOYT, Judy L ANTONIADIS, Dimitri A FITZGERALD, Eugene A |
| description | The fabrication of 4 in. relaxed Si sub(1-x)Ge sub(x)-on-insulator (SGOI) substrates by layer transfer was demonstrated. A high-quality relaxed Si sub(1-x )Ge sub(x) layer was grown using ultrahigh vacuum chemical vapor deposition (UHVCVD) on 4 in. Si donor wafers. Thin Si sub(1-x)Ge sub(x) film (x = 0.2 or 0.25) was then transferred onto an oxidized Si handle wafer by bonding and wafer splitting using hydrogen implantation. The resulting relaxed SGOI structures were characterized by transmission electron microscopy (TEM) and atomic force microscopy (AFM). |
| doi_str_mv | 10.1007/s11664-001-0182-0 |
| format | Article |
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A high-quality relaxed Si sub(1-x )Ge sub(x) layer was grown using ultrahigh vacuum chemical vapor deposition (UHVCVD) on 4 in. Si donor wafers. Thin Si sub(1-x)Ge sub(x) film (x = 0.2 or 0.25) was then transferred onto an oxidized Si handle wafer by bonding and wafer splitting using hydrogen implantation. The resulting relaxed SGOI structures were characterized by transmission electron microscopy (TEM) and atomic force microscopy (AFM).</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-001-0182-0</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Microelectronic fabrication (materials and surfaces technology) ; Semiconductor electronics. Microelectronics. Optoelectronics. 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| subjects | Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Relaxed silicon-germanium on insulator substrate by layer transfer |
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