Relaxed silicon-germanium on insulator substrate by layer transfer

The fabrication of 4 in. relaxed Si sub(1-x)Ge sub(x)-on-insulator (SGOI) substrates by layer transfer was demonstrated. A high-quality relaxed Si sub(1-x )Ge sub(x) layer was grown using ultrahigh vacuum chemical vapor deposition (UHVCVD) on 4 in. Si donor wafers. Thin Si sub(1-x)Ge sub(x) film (x = 0.2 or 0.25) was then transferred onto an oxidized Si handle wafer by bonding and wafer splitting using hydrogen implantation. The resulting relaxed SGOI structures were characterized by transmission electron microscopy (TEM) and atomic force microscopy (AFM).