Schottky barriers for Pt on 6H- and 4H-SiC (0001), (0001), (1100) and (1210) faces measured by I-V, C-V and internal photoemission
Measurements of the Schottky barrier heights (SBH) of 4H and 6H SiC/Pt contacts reveal a dependence on the crystallographic face of the SiC epilayer.
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| Veröffentlicht in: | Materials science forum 2001-10, Vol.389-393 (2), p.921-924 |
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| container_title | Materials science forum |
| container_volume | 389-393 |
| creator | Shigiltchoff, O Kimoto, T Hobgood, D Neudeck, P O Porter, L M Devaty, R P Choyke, W J |
| description | Measurements of the Schottky barrier heights (SBH) of 4H and 6H SiC/Pt contacts reveal a dependence on the crystallographic face of the SiC epilayer. |
| format | Article |
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| identifier | ISSN: 0255-5476 |
| ispartof | Materials science forum, 2001-10, Vol.389-393 (2), p.921-924 |
| issn | 0255-5476 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_26932930 |
| source | Scientific.net Journals |
| title | Schottky barriers for Pt on 6H- and 4H-SiC (0001), (0001), (1100) and (1210) faces measured by I-V, C-V and internal photoemission |
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