Schottky barriers for Pt on 6H- and 4H-SiC (0001), (0001), (1100) and (1210) faces measured by I-V, C-V and internal photoemission

Schottky barriers for Pt on 6H- and 4H-SiC (0001), (0001), (1100) and (1210) faces measured by I-V, C-V and internal photoemission

Measurements of the Schottky barrier heights (SBH) of 4H and 6H SiC/Pt contacts reveal a dependence on the crystallographic face of the SiC epilayer.

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Veröffentlicht in:Materials science forum 2001-10, Vol.389-393 (2), p.921-924
Hauptverfasser: Shigiltchoff, O, Kimoto, T, Hobgood, D, Neudeck, P O, Porter, L M, Devaty, R P, Choyke, W J
Format: Artikel
Sprache:eng
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Zusammenfassung:Measurements of the Schottky barrier heights (SBH) of 4H and 6H SiC/Pt contacts reveal a dependence on the crystallographic face of the SiC epilayer.
ISSN:0255-5476