Selective dry etching of manganite thin films for high sensitive magnetoresistive sensors

Remarkable chemical enhancement in etch rate of La-manganite thin film is obtained in CO/NH 3 reactive ion etching. The etch rate of 70 nm/min and the selectivity of 4.7 for LSMO thin films over Ti mask are achieved. The edge morphology of the patterned La-manganite becomes significantly smooth comp...

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Veröffentlicht in:	Journal of magnetism and magnetic materials 2001-10, Vol.235 (1), p.223-226
Hauptverfasser:	Naoe, M., Hamaya, K., Fujiwara, N., Taniyama, T., Kitamoto, Y., Yamazaki, Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Dry etching Electronics Exact sciences and technology Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics Metal-carbonyls Reactive ion etching Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Beschreibung
Zusammenfassung:	Remarkable chemical enhancement in etch rate of La-manganite thin film is obtained in CO/NH 3 reactive ion etching. The etch rate of 70 nm/min and the selectivity of 4.7 for LSMO thin films over Ti mask are achieved. The edge morphology of the patterned La-manganite becomes significantly smooth compared with pure Ar ion milling. A possible plasma chemistry is also proposed.
ISSN:	0304-8853
DOI:	10.1016/S0304-8853(01)00342-0