Direct extraction of semiconductor device parameters using lateral optimization method

Direct extraction of semiconductor device parameters using lateral optimization method

The efficiency and robustness of the widely used vertical optimization and the present lateral optimization methods are compared under the environment of an industry standard statistical language called S-plus. Using a junction diode as an example, it is shown that the direct lateral optimization is...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Solid-state electronics 1999, Vol.43 (4), p.845-848
Hauptverfasser: Ortiz-Conde, A, Ma, Yuansheng, Thomson, J, Santos, E, Liou, J.J, Garcı́a Sánchez, F.J, Lei, M, Finol, J, Layman, P
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 848
container_issue 4
container_start_page 845
container_title Solid-state electronics
container_volume 43
creator Ortiz-Conde, A
Ma, Yuansheng
Thomson, J
Santos, E
Liou, J.J
Garcı́a Sánchez, F.J
Lei, M
Finol, J
Layman, P
description The efficiency and robustness of the widely used vertical optimization and the present lateral optimization methods are compared under the environment of an industry standard statistical language called S-plus. Using a junction diode as an example, it is shown that the direct lateral optimization is an accurate, efficient, and robust method for extracting semiconductor device parameters. The widely used direct vertical optimization method has the same degree of accuracy and robustness, but the disadvantage of being much less efficient.
doi_str_mv 10.1016/S0038-1101(99)00044-1
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_26924562</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0038110199000441</els_id><sourcerecordid>26924562</sourcerecordid><originalsourceid>FETCH-LOGICAL-c338t-e8954d3ccfbb975dba9f0fdfa16b719ee8093d1108099a16dd8c5fddac25d0203</originalsourceid><addsrcrecordid>eNqFkE1PxCAQhonRxHX1J5hwMnqoAv3YcjLG72QTD35cCYVBMW2pQDfqr5ftGq-eZoY872R4EDqk5JQSWp09EpLXGU39MecnhJCiyOgWmtF6wTNWkHIbzf6QXbQXwnuCWEXJDL1cWQ8qYviMXqpoXY-dwQE6q1yvRxWdxxpWVgEepJcdRPABj8H2r7iVaZAtdkO0nf2WUzoRb07vox0j2wAHv3WOnm-uny7vsuXD7f3lxTJTeV7HDGpeFjpXyjQNX5S6kdwQo42kVbOgHKAmPNfp7FR5etS6VqXRWipWasJIPkdHm72Ddx8jhCg6GxS0rezBjUGwirOirFgCyw2ovAvBgxGDt530X4ISsbYoJotirUhwLiaLgqbc-SYH6RcrC14EZaFXoCdvQjv7z4YfxVR7_A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>26924562</pqid></control><display><type>article</type><title>Direct extraction of semiconductor device parameters using lateral optimization method</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Ortiz-Conde, A ; Ma, Yuansheng ; Thomson, J ; Santos, E ; Liou, J.J ; Garcı́a Sánchez, F.J ; Lei, M ; Finol, J ; Layman, P</creator><creatorcontrib>Ortiz-Conde, A ; Ma, Yuansheng ; Thomson, J ; Santos, E ; Liou, J.J ; Garcı́a Sánchez, F.J ; Lei, M ; Finol, J ; Layman, P</creatorcontrib><description>The efficiency and robustness of the widely used vertical optimization and the present lateral optimization methods are compared under the environment of an industry standard statistical language called S-plus. Using a junction diode as an example, it is shown that the direct lateral optimization is an accurate, efficient, and robust method for extracting semiconductor device parameters. The widely used direct vertical optimization method has the same degree of accuracy and robustness, but the disadvantage of being much less efficient.</description><identifier>ISSN: 0038-1101</identifier><identifier>EISSN: 1879-2405</identifier><identifier>DOI: 10.1016/S0038-1101(99)00044-1</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><ispartof>Solid-state electronics, 1999, Vol.43 (4), p.845-848</ispartof><rights>1999 Elsevier Science Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c338t-e8954d3ccfbb975dba9f0fdfa16b719ee8093d1108099a16dd8c5fddac25d0203</citedby><cites>FETCH-LOGICAL-c338t-e8954d3ccfbb975dba9f0fdfa16b719ee8093d1108099a16dd8c5fddac25d0203</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0038110199000441$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,4010,27900,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Ortiz-Conde, A</creatorcontrib><creatorcontrib>Ma, Yuansheng</creatorcontrib><creatorcontrib>Thomson, J</creatorcontrib><creatorcontrib>Santos, E</creatorcontrib><creatorcontrib>Liou, J.J</creatorcontrib><creatorcontrib>Garcı́a Sánchez, F.J</creatorcontrib><creatorcontrib>Lei, M</creatorcontrib><creatorcontrib>Finol, J</creatorcontrib><creatorcontrib>Layman, P</creatorcontrib><title>Direct extraction of semiconductor device parameters using lateral optimization method</title><title>Solid-state electronics</title><description>The efficiency and robustness of the widely used vertical optimization and the present lateral optimization methods are compared under the environment of an industry standard statistical language called S-plus. Using a junction diode as an example, it is shown that the direct lateral optimization is an accurate, efficient, and robust method for extracting semiconductor device parameters. The widely used direct vertical optimization method has the same degree of accuracy and robustness, but the disadvantage of being much less efficient.</description><issn>0038-1101</issn><issn>1879-2405</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNqFkE1PxCAQhonRxHX1J5hwMnqoAv3YcjLG72QTD35cCYVBMW2pQDfqr5ftGq-eZoY872R4EDqk5JQSWp09EpLXGU39MecnhJCiyOgWmtF6wTNWkHIbzf6QXbQXwnuCWEXJDL1cWQ8qYviMXqpoXY-dwQE6q1yvRxWdxxpWVgEepJcdRPABj8H2r7iVaZAtdkO0nf2WUzoRb07vox0j2wAHv3WOnm-uny7vsuXD7f3lxTJTeV7HDGpeFjpXyjQNX5S6kdwQo42kVbOgHKAmPNfp7FR5etS6VqXRWipWasJIPkdHm72Ddx8jhCg6GxS0rezBjUGwirOirFgCyw2ovAvBgxGDt530X4ISsbYoJotirUhwLiaLgqbc-SYH6RcrC14EZaFXoCdvQjv7z4YfxVR7_A</recordid><startdate>1999</startdate><enddate>1999</enddate><creator>Ortiz-Conde, A</creator><creator>Ma, Yuansheng</creator><creator>Thomson, J</creator><creator>Santos, E</creator><creator>Liou, J.J</creator><creator>Garcı́a Sánchez, F.J</creator><creator>Lei, M</creator><creator>Finol, J</creator><creator>Layman, P</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>1999</creationdate><title>Direct extraction of semiconductor device parameters using lateral optimization method</title><author>Ortiz-Conde, A ; Ma, Yuansheng ; Thomson, J ; Santos, E ; Liou, J.J ; Garcı́a Sánchez, F.J ; Lei, M ; Finol, J ; Layman, P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c338t-e8954d3ccfbb975dba9f0fdfa16b719ee8093d1108099a16dd8c5fddac25d0203</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ortiz-Conde, A</creatorcontrib><creatorcontrib>Ma, Yuansheng</creatorcontrib><creatorcontrib>Thomson, J</creatorcontrib><creatorcontrib>Santos, E</creatorcontrib><creatorcontrib>Liou, J.J</creatorcontrib><creatorcontrib>Garcı́a Sánchez, F.J</creatorcontrib><creatorcontrib>Lei, M</creatorcontrib><creatorcontrib>Finol, J</creatorcontrib><creatorcontrib>Layman, P</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solid-state electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ortiz-Conde, A</au><au>Ma, Yuansheng</au><au>Thomson, J</au><au>Santos, E</au><au>Liou, J.J</au><au>Garcı́a Sánchez, F.J</au><au>Lei, M</au><au>Finol, J</au><au>Layman, P</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Direct extraction of semiconductor device parameters using lateral optimization method</atitle><jtitle>Solid-state electronics</jtitle><date>1999</date><risdate>1999</risdate><volume>43</volume><issue>4</issue><spage>845</spage><epage>848</epage><pages>845-848</pages><issn>0038-1101</issn><eissn>1879-2405</eissn><abstract>The efficiency and robustness of the widely used vertical optimization and the present lateral optimization methods are compared under the environment of an industry standard statistical language called S-plus. Using a junction diode as an example, it is shown that the direct lateral optimization is an accurate, efficient, and robust method for extracting semiconductor device parameters. The widely used direct vertical optimization method has the same degree of accuracy and robustness, but the disadvantage of being much less efficient.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/S0038-1101(99)00044-1</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0038-1101
ispartof Solid-state electronics, 1999, Vol.43 (4), p.845-848
issn 0038-1101
1879-2405
language eng
recordid cdi_proquest_miscellaneous_26924562
source Elsevier ScienceDirect Journals Complete
title Direct extraction of semiconductor device parameters using lateral optimization method
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-12T21%3A55%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Direct%20extraction%20of%20semiconductor%20device%20parameters%20using%20lateral%20optimization%20method&rft.jtitle=Solid-state%20electronics&rft.au=Ortiz-Conde,%20A&rft.date=1999&rft.volume=43&rft.issue=4&rft.spage=845&rft.epage=848&rft.pages=845-848&rft.issn=0038-1101&rft.eissn=1879-2405&rft_id=info:doi/10.1016/S0038-1101(99)00044-1&rft_dat=%3Cproquest_cross%3E26924562%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=26924562&rft_id=info:pmid/&rft_els_id=S0038110199000441&rfr_iscdi=true