Direct extraction of semiconductor device parameters using lateral optimization method

The efficiency and robustness of the widely used vertical optimization and the present lateral optimization methods are compared under the environment of an industry standard statistical language called S-plus. Using a junction diode as an example, it is shown that the direct lateral optimization is an accurate, efficient, and robust method for extracting semiconductor device parameters. The widely used direct vertical optimization method has the same degree of accuracy and robustness, but the disadvantage of being much less efficient.