Er-doped oxidised porous silicon waveguides

The present work reports Er-doped channel oxidized porous silicon waveguides (OPSWG) formed from n super(+)-type Si by the two-step anodisation process. Er has been introduced into porous silicon before oxidation by a cathodic treatment in 0.1 M Er (NO sub(3)) sub(3) aqueous solution. A correlation...

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Veröffentlicht in:	Thin solid films 2001-09, Vol.396 (1-2), p.201-203
Hauptverfasser:	BALUCANI, M, BONDARENKO, V, LAMEDICA, G, FERRARI, A, DOLGYI, L, VOROZOV, N, YAKOVTSEVA, V, VOLCHEK, S, PETROVICH, V, KAZUCHITS, N
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Integrated optics. Optical fibers and wave guides Optical and optoelectronic circuits
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Zusammenfassung:	The present work reports Er-doped channel oxidized porous silicon waveguides (OPSWG) formed from n super(+)-type Si by the two-step anodisation process. Er has been introduced into porous silicon before oxidation by a cathodic treatment in 0.1 M Er (NO sub(3)) sub(3) aqueous solution. A correlation between Er concentration and refractive index profiles has shown dominant core doping with Er relative to cladding regions. Reported Er concentration of 0.8 at.% in the OPSWG is large enough to attain the amplification effect. copyright 2001 Elsevier Science B.V. All rights reserved.
ISSN:	0040-6090 1879-2731