DC and low-frequency noise characteristics of SiGe p-channel FETs designed for 0.13-μm technology

The impact of hole confinement on the DC and low frequency noise in SiGe p-channel FETs is investigated by comparison with Si p-FETs produced by the same technology. The relative spectral power density of low frequency (1/f) noise in SiGe pFETs is found to be significantly lower than in Si devices....

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on electron devices 1999, Vol.46 (7), p.1514-1517
Hauptverfasser: Okhonin, S., Py, M.A., Georgescu, B., Fischer, H., Risch, L.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The impact of hole confinement on the DC and low frequency noise in SiGe p-channel FETs is investigated by comparison with Si p-FETs produced by the same technology. The relative spectral power density of low frequency (1/f) noise in SiGe pFETs is found to be significantly lower than in Si devices. This is mainly attributed to the physical separation of the holes confined in the SiGe channel from the Si/SiO sub(2) interface. The low value of SiGe channel noise proves the good quality of epilayers and heterointerfaces, as also revealed by the TEM cross section
ISSN:0018-9383
DOI:10.1109/16.772504