High-Performance Organic Laser Semiconductor Enabling Efficient Light-Emitting Transistors and Low-Threshold Microcavity Lasers

An organic light-emitting transistor (OLET) is a candidate device architecture for developing electrically pumped organic solid-state lasers, but it remains a critical challenge because of the lack of organic semiconductors that simultaneously possess a high solid-state emission efficiency (Φs), a high and balanced ambipolar mobility (μh,e), and a large stimulated emission cross-section. Here, we designed a molecule of 4,4′-bis­(2-dibenzothiophenyl-vinyl)-biphenyl (DBTVB) and prepared its ultrathin single-crystal microplates with herringbone packing arrangements, which achieve balanced mobilities of μh = 3.55 ± 0.5 and μe = 2.37 ± 0.5 cm2 V–1 s–1, a high Φs of 85 ± 3%, and striking low-threshold laser characteristics. Theoretical and experimental investigations reveal that a strong electronic coupling and a small reorganization energy ensure efficient charge transport; meanwhile, the exciton-vibration effect and negligible π–π orbital overlap give rise to highly emissive H-aggregates and facilitate laser emission. Furthermore, OLET-based DBTVB crystals offer an internal quantum efficiency approaching 100% and a record-high electroluminescence external quantum efficiency of 4.03%.