EPITAXIAL GROWTH OF BaTiO3 THIN FILM ON SrTiO3 SUBSTRATE IN ULTRA HIGH VACUUM WITHOUT INTRODUCING OXIDANT

A high-quality BaTiO3 thin film on SrTiO3 substrate was obtained by shutting off the O supply during growth. Epitaxial growth of BaTiO3 film was carried out with MBE under low O partial pressure (pO2 < 1 x 10-8 Pa). Although only Ba and Ti metals were supplied without introducing oxidant during the growth, a clear RHEED intensity oscillation from layer-by-layer growth of BaTiO3 was observed. O was automatically fed from the substrate during the growth. The deposited film had an approximately stoichiometric composition and single-phase of BaTiO3 from the analyses of AES and XRD. 12 refs.