Partial dislocations in the X-ray topography of as-grown hexagonal silicon carbide crystals
Dislocations visible in X-ray topographs of as-grown hexagonal silicon carbide Lely platelets and physical vapor transport process wafers extinguished as if they had Burgers vectors of 1/3〈 11 2 ̄ 0 〉. Under the electron microscope, beneath the resolution of X-ray topography, short lengths of these...
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| Veröffentlicht in: | Materials Science and Engineering. A 2001-11, Vol.87 (2), p.173-177 |
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| container_title | Materials Science and Engineering. A |
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| creator | Vetter, William M Dudley, Michael |
| description | Dislocations visible in X-ray topographs of as-grown hexagonal silicon carbide Lely platelets and physical vapor transport process wafers extinguished as if they had Burgers vectors of 1/3〈
11
2
̄
0
〉. Under the electron microscope, beneath the resolution of X-ray topography, short lengths of these dislocations were shown to consist of pairs of 1/3〈
10
1
̄
0
〉 Shockley partials spanning narrow ribbons of stacking fault. An unusual example of a
b
=1/3〈
11
2
̄
0
〉 dislocation in a Lely platelet visibly separated into its partials in an X-ray topograph was presented. |
| doi_str_mv | 10.1016/S0921-5107(01)00738-3 |
| format | Article |
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11
2
̄
0
〉. Under the electron microscope, beneath the resolution of X-ray topography, short lengths of these dislocations were shown to consist of pairs of 1/3〈
10
1
̄
0
〉 Shockley partials spanning narrow ribbons of stacking fault. An unusual example of a
b
=1/3〈
11
2
̄
0
〉 dislocation in a Lely platelet visibly separated into its partials in an X-ray topograph was presented.</description><identifier>ISSN: 0921-5107</identifier><identifier>EISSN: 1873-4944</identifier><identifier>DOI: 10.1016/S0921-5107(01)00738-3</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Defects and impurities in crystals; microstructure ; Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.) ; DISLOCATIONS ; Exact sciences and technology ; Linear defects: dislocations, disclinations ; NATIONAL SYNCHROTRON LIGHT SOURCE ; NSLS ; PARTICLE ACCELERATORS ; Physics ; Silicon carbide crystals ; SILICON CARBIDES ; Structure of solids and liquids; crystallography ; TOPOGRAPHY ; X-ray topographs</subject><ispartof>Materials Science and Engineering. A, 2001-11, Vol.87 (2), p.173-177</ispartof><rights>2001 Elsevier Science B.V.</rights><rights>2002 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c462t-56257fd946e8ca21876c8a65c2232d61ca50eae0d6473d5c739e41926fee45773</citedby><cites>FETCH-LOGICAL-c462t-56257fd946e8ca21876c8a65c2232d61ca50eae0d6473d5c739e41926fee45773</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0921-5107(01)00738-3$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,885,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=14092895$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/15009172$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Vetter, William M</creatorcontrib><creatorcontrib>Dudley, Michael</creatorcontrib><creatorcontrib>Brookhaven National Laboratory, National Synchrotron Light Source (US)</creatorcontrib><title>Partial dislocations in the X-ray topography of as-grown hexagonal silicon carbide crystals</title><title>Materials Science and Engineering. A</title><description>Dislocations visible in X-ray topographs of as-grown hexagonal silicon carbide Lely platelets and physical vapor transport process wafers extinguished as if they had Burgers vectors of 1/3〈
11
2
̄
0
〉. Under the electron microscope, beneath the resolution of X-ray topography, short lengths of these dislocations were shown to consist of pairs of 1/3〈
10
1
̄
0
〉 Shockley partials spanning narrow ribbons of stacking fault. An unusual example of a
b
=1/3〈
11
2
̄
0
〉 dislocation in a Lely platelet visibly separated into its partials in an X-ray topograph was presented.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Defects and impurities in crystals; microstructure</subject><subject>Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)</subject><subject>DISLOCATIONS</subject><subject>Exact sciences and technology</subject><subject>Linear defects: dislocations, disclinations</subject><subject>NATIONAL SYNCHROTRON LIGHT SOURCE</subject><subject>NSLS</subject><subject>PARTICLE ACCELERATORS</subject><subject>Physics</subject><subject>Silicon carbide crystals</subject><subject>SILICON CARBIDES</subject><subject>Structure of solids and liquids; crystallography</subject><subject>TOPOGRAPHY</subject><subject>X-ray topographs</subject><issn>0921-5107</issn><issn>1873-4944</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNqFkF1rFDEUhoMouFZ_ghAQxV5MPcnkY-ZKStEqFCyoIHgRjpkzu5Fpsiapdf-92W6xl16dm-c978vD2HMBJwKEefMZRik6LcC-BnEMYPuh6x-wlRhs36lRqYds9Q95zJ6U8hMAhJRyxb5fYq4BFz6FsiSPNaRYeIi8boh_6zLueE3btM643ex4mjmWbp3TTeQb-oPrFFu0hCX4FLnH_CNMxH3elYpLecoeze3Qs7t7xL6-f_fl7EN38en849npReeVkbXTRmo7T6MyNHiUbbXxAxrtpezlZIRHDYQEk1G2n7S3_UhKjNLMREpb2x-xF4e_qdTgig-V_KYNiuSrExpgFFY26tWB2ub065pKdVeheFoWjJSui5NmBKssNFAfQJ9TKZlmt83hCvPOCXB74e5WuNvbdCDcrXDXt9zLuwIsHpc5Y_Sh3IdVSw2jbtzbA0fNye9AeT-Zoqcp5P3iKYX_NP0FRUeUNw</recordid><startdate>20011115</startdate><enddate>20011115</enddate><creator>Vetter, William M</creator><creator>Dudley, Michael</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope><scope>OTOTI</scope></search><sort><creationdate>20011115</creationdate><title>Partial dislocations in the X-ray topography of as-grown hexagonal silicon carbide crystals</title><author>Vetter, William M ; Dudley, Michael</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c462t-56257fd946e8ca21876c8a65c2232d61ca50eae0d6473d5c739e41926fee45773</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Defects and impurities in crystals; microstructure</topic><topic>Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)</topic><topic>DISLOCATIONS</topic><topic>Exact sciences and technology</topic><topic>Linear defects: dislocations, disclinations</topic><topic>NATIONAL SYNCHROTRON LIGHT SOURCE</topic><topic>NSLS</topic><topic>PARTICLE ACCELERATORS</topic><topic>Physics</topic><topic>Silicon carbide crystals</topic><topic>SILICON CARBIDES</topic><topic>Structure of solids and liquids; crystallography</topic><topic>TOPOGRAPHY</topic><topic>X-ray topographs</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vetter, William M</creatorcontrib><creatorcontrib>Dudley, Michael</creatorcontrib><creatorcontrib>Brookhaven National Laboratory, National Synchrotron Light Source (US)</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>OSTI.GOV</collection><jtitle>Materials Science and Engineering. A</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Vetter, William M</au><au>Dudley, Michael</au><aucorp>Brookhaven National Laboratory, National Synchrotron Light Source (US)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Partial dislocations in the X-ray topography of as-grown hexagonal silicon carbide crystals</atitle><jtitle>Materials Science and Engineering. A</jtitle><date>2001-11-15</date><risdate>2001</risdate><volume>87</volume><issue>2</issue><spage>173</spage><epage>177</epage><pages>173-177</pages><issn>0921-5107</issn><eissn>1873-4944</eissn><abstract>Dislocations visible in X-ray topographs of as-grown hexagonal silicon carbide Lely platelets and physical vapor transport process wafers extinguished as if they had Burgers vectors of 1/3〈
11
2
̄
0
〉. Under the electron microscope, beneath the resolution of X-ray topography, short lengths of these dislocations were shown to consist of pairs of 1/3〈
10
1
̄
0
〉 Shockley partials spanning narrow ribbons of stacking fault. An unusual example of a
b
=1/3〈
11
2
̄
0
〉 dislocation in a Lely platelet visibly separated into its partials in an X-ray topograph was presented.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/S0921-5107(01)00738-3</doi><tpages>5</tpages></addata></record> |
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| ispartof | Materials Science and Engineering. A, 2001-11, Vol.87 (2), p.173-177 |
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| language | eng |
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| source | Access via ScienceDirect (Elsevier) |
| subjects | Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.) DISLOCATIONS Exact sciences and technology Linear defects: dislocations, disclinations NATIONAL SYNCHROTRON LIGHT SOURCE NSLS PARTICLE ACCELERATORS Physics Silicon carbide crystals SILICON CARBIDES Structure of solids and liquids crystallography TOPOGRAPHY X-ray topographs |
| title | Partial dislocations in the X-ray topography of as-grown hexagonal silicon carbide crystals |
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