Partial dislocations in the X-ray topography of as-grown hexagonal silicon carbide crystals

Dislocations visible in X-ray topographs of as-grown hexagonal silicon carbide Lely platelets and physical vapor transport process wafers extinguished as if they had Burgers vectors of 1/3〈 11 2 ̄ 0 〉. Under the electron microscope, beneath the resolution of X-ray topography, short lengths of these...

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Veröffentlicht in:Materials Science and Engineering. A 2001-11, Vol.87 (2), p.173-177
Hauptverfasser: Vetter, William M, Dudley, Michael
Format: Artikel
Sprache:eng
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Zusammenfassung:Dislocations visible in X-ray topographs of as-grown hexagonal silicon carbide Lely platelets and physical vapor transport process wafers extinguished as if they had Burgers vectors of 1/3〈 11 2 ̄ 0 〉. Under the electron microscope, beneath the resolution of X-ray topography, short lengths of these dislocations were shown to consist of pairs of 1/3〈 10 1 ̄ 0 〉 Shockley partials spanning narrow ribbons of stacking fault. An unusual example of a b =1/3〈 11 2 ̄ 0 〉 dislocation in a Lely platelet visibly separated into its partials in an X-ray topograph was presented.
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(01)00738-3