Partial dislocations in the X-ray topography of as-grown hexagonal silicon carbide crystals
Dislocations visible in X-ray topographs of as-grown hexagonal silicon carbide Lely platelets and physical vapor transport process wafers extinguished as if they had Burgers vectors of 1/3〈 11 2 ̄ 0 〉. Under the electron microscope, beneath the resolution of X-ray topography, short lengths of these...
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Veröffentlicht in: | Materials Science and Engineering. A 2001-11, Vol.87 (2), p.173-177 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Dislocations visible in X-ray topographs of as-grown hexagonal silicon carbide Lely platelets and physical vapor transport process wafers extinguished as if they had Burgers vectors of 1/3〈
11
2
̄
0
〉. Under the electron microscope, beneath the resolution of X-ray topography, short lengths of these dislocations were shown to consist of pairs of 1/3〈
10
1
̄
0
〉 Shockley partials spanning narrow ribbons of stacking fault. An unusual example of a
b
=1/3〈
11
2
̄
0
〉 dislocation in a Lely platelet visibly separated into its partials in an X-ray topograph was presented. |
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ISSN: | 0921-5107 1873-4944 |
DOI: | 10.1016/S0921-5107(01)00738-3 |