Optical properties of CrO/ZrO optical superlattice for attenuated phase shifting mask at 193 nm wavelength
CrO/ZrO optical superlattices composed of ten film stacks with ∼9 nm thickness in each stack are obtained in a duel-gun rf magnetic sputtering system. By controlling the thickness percentage of ZrO in a CrO/ZrO stack and the flow-rate ratio of O 2/Ar, the optical requirements for optical superlattic...
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| Veröffentlicht in: | Microelectronic engineering 2001-09, Vol.57, p.439-445 |
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| container_title | Microelectronic engineering |
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| creator | Lai, F.D. Wang, L.A. |
| description | CrO/ZrO optical superlattices composed of ten film stacks with ∼9 nm thickness in each stack are obtained in a duel-gun rf magnetic sputtering system. By controlling the thickness percentage of ZrO in a CrO/ZrO stack and the flow-rate ratio of O
2/Ar, the optical requirements for optical superlattices being used as APSM blanks can be met. The dielectric constants of CrO/ZrO optical superlattices are shown to fit the effective medium approximation, and the calculated transmittance, reflectance and total film thickness of CrO/ZrO optical superlattices may thus serve as π-phase shifters. |
| doi_str_mv | 10.1016/S0167-9317(01)00464-6 |
| format | Article |
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2/Ar, the optical requirements for optical superlattices being used as APSM blanks can be met. The dielectric constants of CrO/ZrO optical superlattices are shown to fit the effective medium approximation, and the calculated transmittance, reflectance and total film thickness of CrO/ZrO optical superlattices may thus serve as π-phase shifters.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/S0167-9317(01)00464-6</identifier><identifier>CODEN: MIENEF</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Microelectronic fabrication (materials and surfaces technology) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Microelectronic engineering, 2001-09, Vol.57, p.439-445</ispartof><rights>2001 Elsevier Science B.V.</rights><rights>2001 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c414t-f5e3ba666c0e4b6e98d07d078f487fb471843440ade784899265f97ec9ee37fb3</citedby><cites>FETCH-LOGICAL-c414t-f5e3ba666c0e4b6e98d07d078f487fb471843440ade784899265f97ec9ee37fb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0167931701004646$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3537,23909,23910,25118,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=1134557$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Lai, F.D.</creatorcontrib><creatorcontrib>Wang, L.A.</creatorcontrib><title>Optical properties of CrO/ZrO optical superlattice for attenuated phase shifting mask at 193 nm wavelength</title><title>Microelectronic engineering</title><description>CrO/ZrO optical superlattices composed of ten film stacks with ∼9 nm thickness in each stack are obtained in a duel-gun rf magnetic sputtering system. By controlling the thickness percentage of ZrO in a CrO/ZrO stack and the flow-rate ratio of O
2/Ar, the optical requirements for optical superlattices being used as APSM blanks can be met. The dielectric constants of CrO/ZrO optical superlattices are shown to fit the effective medium approximation, and the calculated transmittance, reflectance and total film thickness of CrO/ZrO optical superlattices may thus serve as π-phase shifters.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LAzEQhoMoWKs_QchBRA9rk242yZ5Eil9Q6EG9eAlpdtKmbnfXJK34700_0KMwZDK8z8wwL0LnlNxQQvngJT0iK3Mqrgi9JoRxlvED1KNS5FlRcHmIer_IMToJYUFSzYjsocWki87oGne-7cBHBwG3Fo_8ZPDuJ7jdq2GVxFrHVAG2rcfpC81KR6hwN9cBcJg7G10zw0sdPpKMaZnjZom_9BpqaGZxfoqOrK4DnO1zH7093L-OnrLx5PF5dDfODKMsZraAfKo554YAm3IoZUVECmmZFHbKBJUsZ4zoCoRksiyHvLClAFMC5AnI--hyNzed9LmCENXSBQN1rRtoV0ENeUkKJlgCix1ofBuCB6s675bafytK1MZZtXVWbWxThKqts4qnvov9Ah2SOdbrxrjw10xzVhQiYbc7DNKxawdeBeOgMVA5DyaqqnX_LPoBuECNkw</recordid><startdate>20010901</startdate><enddate>20010901</enddate><creator>Lai, F.D.</creator><creator>Wang, L.A.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20010901</creationdate><title>Optical properties of CrO/ZrO optical superlattice for attenuated phase shifting mask at 193 nm wavelength</title><author>Lai, F.D. ; Wang, L.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c414t-f5e3ba666c0e4b6e98d07d078f487fb471843440ade784899265f97ec9ee37fb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lai, F.D.</creatorcontrib><creatorcontrib>Wang, L.A.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lai, F.D.</au><au>Wang, L.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optical properties of CrO/ZrO optical superlattice for attenuated phase shifting mask at 193 nm wavelength</atitle><jtitle>Microelectronic engineering</jtitle><date>2001-09-01</date><risdate>2001</risdate><volume>57</volume><spage>439</spage><epage>445</epage><pages>439-445</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>CrO/ZrO optical superlattices composed of ten film stacks with ∼9 nm thickness in each stack are obtained in a duel-gun rf magnetic sputtering system. By controlling the thickness percentage of ZrO in a CrO/ZrO stack and the flow-rate ratio of O
2/Ar, the optical requirements for optical superlattices being used as APSM blanks can be met. The dielectric constants of CrO/ZrO optical superlattices are shown to fit the effective medium approximation, and the calculated transmittance, reflectance and total film thickness of CrO/ZrO optical superlattices may thus serve as π-phase shifters.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/S0167-9317(01)00464-6</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record> |
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| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Optical properties of CrO/ZrO optical superlattice for attenuated phase shifting mask at 193 nm wavelength |
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