New Trap-Assisted Band-to-Band Tunneling Induced Gate Current Model for P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sub-3 nm Oxides

A new trap-assisted band-to-band tunneling (TAB) gate current model is proposed to describe the new observed band-to-band tunneling (BBT) induced gate current characteristics of p-channel metal-oxide-semiconductor field effect transistors (PMOSFET's) with ultra-thin gate oxide. Based on this new TAB gate current model, the off-state gate currents of PMOSFET's with various sub-3 nm gate oxides can be well characterized, while the conventional BBT current model is no longer applicable in this regime.