Uniaxial, tensile-strained Si devices

Uniaxial, in-plane, tensile straining of silicon devices is reported. Strain is applied via mechanical techniques and then fixed by bonding to an appropriate substrate. Results are reported for diffused resistors and for some metal-oxide semiconductor field effect transistor (MOSFET) devices. Strain is introduced after device processing is complete, which enables full advantage to be taken of mainstream silicon processing technology. This macroscopic method is effective regardless of device size but has particular benefit in the deep submicron region. Mobility conductivity enhancement factors > 2 for an applied strain of 0.05% are reported.