Confinement versus localization for quantum wells and quantum wires in a self-assembled structure

We investigate the effects of interface localization due to microroughness in a sample presenting a quantum well and a quantum wire. The magnetoshift of the emission lines measured at different temperatures are analysed using a model where the average effect of the microroughness is represented by a Gaussian defect. We obtain a quantitative estimate of the exciton localization due to the microroughness. As the temperature increases the excitons are released from the weak localized defects. Time-resolved luminescence results corroborate this interpretation.