Bipolar model extension for MOS transistors considering gate coupling effects in the HBM ESD domain

The presented compact model for NMOS transistors combines both the high-current bipolar mode and the MOS mode considering modulation of the current gain β and gate coupling effects. For the studied 0.35 μm-CMOS devices, measurement and simulation correlate very well with respect to layout variations, fulfilling a prerequisite for the simulation guided synthesis and optimization of ESD protection structures and schemes. The open model interface also allows the use of existing proprietary MOS-models.