A novel method for determining the effect of interface trap generation on the degradation of n-MOSFETs under different hot-carrier stress modes

Hot-carrier effects of n-channel MOSFETs are investigated under a series of stress modes. A novel method for determining the effect of interface trap generation on device degradation is proposed based on alternating injection technique. Results show that the effect of interface trap generation has a linear relationship with stress mode. This method is useful in device degradation mechanism study and in lifetime prediction modeling of hot-carrier effects.