Characterization of Ar exp + irradiated ZrO sub 2 -Y sub 2 O sub 3 films on different substrate materials

Zirconia-yttria films containing 7.0 wt% Y sub 2 O sub 3 were prepared on silicon or iron substrate by r.f. magnetron sputtering deposition followed by 40 keV Ar exp + ion irradiation at room temperature. The characterization of the zirconia-yttria film phase structure was carried out by x-ray diffraction (XRD) and Raman spectroscopy. It is found that the zirconia-yttria films deposited by r.f. magnetron sputtering on silicon substrate were amorphous, while monoclinic and cubic phases appeared for the films prepared by the same deposition method on iron substrate. Also films grown on the different substrates and exposed to Ar exp + irradiation, exhibited different phase transformation behavior.