Evaluating the Three Common SiC Polytypes for MESFET Applications

The in-house 2D device simulator PROSA was used to simulate and compare MESFET structures made of the three SiC polytypes 3C, 4H, and 6H. Starting with a simple 'standard' MESFET structure, the effect of variations in doping and gate length was studied. 4H SiC MESFETs seemed to perform best overall, while 3C SiC seemed to work well at lower doping. Another series of simulations was used to study the effects of variations of the saturation velocity on the performance of SiC MESFETs. (Author)