Interfacial reactions between a lead borosilicate glass containing CuO and an Al/Si alloy — evidence for galvanic cells

Interfacial reactions between a lead borosilicate glass containing CuO and an Al/Si alloy — evidence for galvanic cells

A PbO-rich borosilicate glass with the additions of CuO and Al 2O 3 has been developed as a thick-film, dielectric coating for a high Si content Al/Si alloy produced by the Osprey process (Al–70Si wt.%). Wetting behaviour and interfacial reactions were investigated using sessile drop experiments at...

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Veröffentlicht in:Journal of the European Ceramic Society 2001-03, Vol.21 (3), p.427-436
Hauptverfasser: Ison, S.J., Holland, D., Bushby, R.
Format: Artikel
Sprache:eng
Schlagworte:
Al/Si alloy
Bonding
Borosilicates
Condensed matter: structure, mechanical and thermal properties
Diffusion
interface formation
Exact sciences and technology
Glasses
Interfaces
PbO
Physics
Solid surfaces and solid-solid interfaces
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Wetting
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Zusammenfassung:A PbO-rich borosilicate glass with the additions of CuO and Al 2O 3 has been developed as a thick-film, dielectric coating for a high Si content Al/Si alloy produced by the Osprey process (Al–70Si wt.%). Wetting behaviour and interfacial reactions were investigated using sessile drop experiments at temperatures between 520 and 583°C under air and argon atmosphere. The wetting behaviour of the glass was found to be a function of atmosphere and wetting angle decreased with increasing temperature and time. Coatings applied in air in the range 520–565°C showed
ISSN:0955-2219
1873-619X
DOI:10.1016/S0955-2219(00)00192-8